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BLF4G10-160
UHF power LDMOS transistor
Rev. 01 -- 22 June 2007 Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB test circuit. Mode of operation f CW 2-tone GSM EDGE CDMA
[1] [2]
VDS PL 28 28 28 28
PL(AV) Gp
D
ACPR400 ACPR600 ACPR750 ACPR1980 EVMrms IMD3 (dBc) -61[1] (dBc) -72[1] (dBc) -45[2] (dBc) -64[2] (%) 3.0 (dBc) -29 -
(MHz) (V) 894 894 894 881.5
(W) (W) 200 80 80 40
(dB) (%) 19.0 59 19.7 41.5
19.7 42.5 19.0 29.5 -
ACPR400 and ACPR600 at 30 kHz resolution bandwidth. Test signal: IS-95, with PAR = 9.9 dB at 0.01 % probability.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical GSM EDGE performance at f = 894 MHz, VDS = 28 V and IDq = 900 mA: N Average output power = 80 W N Gain = 19.7 dB N Efficiency = 41.5 % N ACPR400 = -61 dBc N ACPR600 = -72 dBc N EVMrms = 3.0 % I Easy power control I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use
NXP Semiconductors
BLF4G10-160
UHF power LDMOS transistor
1.3 Applications
I RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range.
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1 3 2
Symbol
1
2 3
sym112
[1]
Connected to flange
3. Ordering information
Table 3. Ordering information Package Name BLF4G10-160 Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads Version SOT502A Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 65 +15 15 +150 200 Unit V V A C C
5. Thermal characteristics
Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL = 50 W Typ 0.55 Max 0.64 Unit K/W
BLF4G10-160_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 22 June 2007
2 of 14
NXP Semiconductors
BLF4G10-160
UHF power LDMOS transistor
6. Characteristics
Table 6. Characteristics Tj = 25 C; unless otherwise specified. Symbol Parameter Conditions VGS = 0 V; ID = 2.1 mA VDS = 10 V; ID = 230 mA VDS = 28 V; ID = 900 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 6 V; VDS = 10 V VGS = 15 V; VDS = 0 V VDS = 10 V; ID = 7.5 A VGS = VGS(th) + 6 V; ID = 7.5 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 2.5 35 Typ 2.9 42 11 0.065 3.0 Max Unit 3.5 5 420 V V A A nA S pF V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance
2.65 3.15
3.65 V
7. Application information
Table 7. Application information Mode of operation: 2-tone; f1 = 894 MHz; f2 = 894.2 MHz; RF performance at VDS = 28 V; IDq = 900 mA; Tcase = 25 C; unless otherwise specified; in a class-AB test circuit. Symbol Parameter Gp RLin D IMD3 IMD5 IMD7 power gain input return loss drain efficiency third order intermodulation distortion fifth order intermodulation distortion seventh order intermodulation distortion Conditions PL(PEP) = 160 W PL(PEP) = 160 W PL(PEP) = 160 W PL(PEP) = 160 W PL(PEP) = 160 W PL(PEP) = 160 W Min 40 Typ -10 -29 -38 -57 Max Unit dB dB % dBc dBc dBc -6 -26 -35 -53 18.5 19.7 42.5 -
7.1 Ruggedness in class-AB operation
The BLF4G10-160 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 900 mA; PL = 160 W (CW); f = 894 MHz.
BLF4G10-160_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 22 June 2007
3 of 14
NXP Semiconductors
BLF4G10-160
UHF power LDMOS transistor
21 Gp (dB) 19
001aag546
60 D (%) 40
22 Gp (dB) 20 Gp
001aag547
60 D (%) 40
Gp
D
D 17 20 18 20
15 0 80 160 PL (W)
0 240
16 0 40 80 PL(AV) (W)
0 120
VDS = 28 V; IDq = 900 mA; Tcase = 25 C; f = 894 MHz.
VDS = 28 V; IDq = 900 mA; Tcase = 25 C; f = 894 MHz.
Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values
0 IMD (dBc) -20 IMD3
001aag548
Fig 2. Two-tone power gain and drain efficiency as functions of average load power; typical values
0 IMD3 (dBc) -20
001aag549
-40
IMD5 IMD7
-40
1 2 3
-60
-60
4
-80 0 40 80 PL(AV) (W) 120
-80 0 40 80 PL(AV) (W) 120
VDS = 28 V; IDq = 900 mA; Tcase = 25 C; f = 894 MHz.
VDS = 28 V; Tcase = 25 C; f = 894 MHz. (1) IDq = 800 mA. (2) IDq = 900 mA. (3) IDq = 1000 mA. (4) IDq = 1100 mA.
Fig 3. Intermodulation distortion a function of average load power; typical values
Fig 4. IMD3 as a function of average load power; typical values
BLF4G10-160_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 22 June 2007
4 of 14
NXP Semiconductors
BLF4G10-160
UHF power LDMOS transistor
21 Gp (dB) 20 Gp
001aag550
50 D (%) 40
-50 ACPR (dBc) -60
001aag551
19
30
ACPR400
18
D
20 -70 ACPR600
17
10
16 0 20 40 60
0 80 100 PL(AV) (W)
-80 0 20 40 60 80 100 PL(AV) (W)
VDS = 28 V; IDq = 900 mA; Tcase = 25 C; f = 894 MHz.
VDS = 28 V; IDq = 900 mA; Tcase = 25 C; f = 894 MHz.
Fig 5. GSM EDGE power gain and drain efficiency as functions of average load power; typical values
16 EVM (%) 12
001aag552
Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as a function of average load power; typical values
-56 ACPR (dBc) -60 ACPR400 3
001aag553
4 EVM (%)
8
EVMM
-64
2
4 EVMrms
-68 EVMrms
1
0 0 20 40 60 80 100 PL(AV) (W)
-72 0 20 40 D (%) 60
0
VDS = 28 V; IDq = 900 mA; Tcase = 25 C; f = 894 MHz.
VDS = 28 V; IDq = 900 mA; Tcase = 25 C; f = 894 MHz.
Fig 7. GSM EDGE rms EVM and peak EVM as functions of average load power; typical values
Fig 8. GSM EDGE ACPR and rms EVM as functions of drain efficiency; typical values
BLF4G10-160_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 22 June 2007
5 of 14
NXP Semiconductors
BLF4G10-160
UHF power LDMOS transistor
20 Gp (dB) 19
001aag554
40 D (%) 30
20 Gp (dB) 19 2 3
001aag555
Gp
1
18 D 17
20
18
10
17
16 28 32 36 40
0 44 48 PL(AV) (dBm)
16 28 32 36 40 44 48 PL(AV) (dBm)
VDS = 28 V; IDq = 1100 mA; f = 881.5 MHz. Test signal: IS-95 with PAR = 9.9 dB at 0.01 % probability.
VDS = 28 V; IDq = 1100 mA. (1) f = 869 MHz. (2) f = 881.5 MHz. (3) f = 894 MHz.
Fig 9. CDMA power gain and drain efficiency as functions of average load power; typical values, measured in a CDMA demo test circuit
-35 ACPR (dBc) -45
Fig 10. CDMA power gain as a function of average load power at various frequencies; typical values, measured in a CDMA demo test circuit
001aag556
-55
ACPR750
-65 ACPR1980
-75 28 32 36 40 44 48 PL(AV) (dBm)
VDS = 28 V; IDq = 1100 mA; Tcase = 25 C; f = 881.5 MHz.
Fig 11. CDMA ACPR at 750 kHz and at 1980 kHz as functions of average load power; typical values, measured in a CDMA demo test circuit
BLF4G10-160_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 22 June 2007
6 of 14
NXP Semiconductors
BLF4G10-160
UHF power LDMOS transistor
8. Test information
VDD Vbias
R1 L5 C5 L6 C6 C7 C8 C9 C10
L4 L3
L7 L8 L9 C4 L10
RF in
L1
C1
L2 C2
RF out
C3
001aag557
See Table 8 for a list of components
Fig 12. Circuit schematic for 894 MHz production test circuit
+Vbias
L6 C7 C8 C9
VDD
C10 L5 C6 C5 L1 C1 L2 L3 L4 L7 L8 C3 L9 R1
L10
C2
C4
BLF4G10-160
Input-Rev1
BLF4G10-160
Output-Rev1
001aag558
The striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) with r = 6.15 and thickness = 0.635 mm. See Table 8 for a list of components.
Fig 13. Component layout for 894 MHz production test circuit
BLF4G10-160_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 22 June 2007
7 of 14
NXP Semiconductors
BLF4G10-160
UHF power LDMOS transistor
List of components (see Figure 12 and Figure 13). Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor tantalum capacitor ceramic capacitor electrolytic capacitor stripline stripline tapered stripline stripline stripline stripline stripline tapered stripline stripline stripline SMD resistor Value 68 pF 1.5 pF 1.4 pF 10 F 1 F 220 F 5.1
[2] [2] [2] [1]
Table 8.
Component C1, C4, C6, C7 C2 C3 C5, C9 C8 C10 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 R1
[1] [2]
Remarks
[1]
[1]
1812X7R105KL2AB (W x L) 0.914 mm x 10.160 mm (W x L) 0.914 mm x 24.384 mm (W1 x W2 x L) 0.914 mm x 19.812 mm x 11.024 mm (W x L) 19.812 mm x 21.438 mm (W x L) 0.914 mm x 42.342 mm (W x L) 1.524 mm x 42.418 mm (W x L) 17.221 mm x 22.479 mm (W1 x W2 x L) 17.221 mm x 0.914 mm x 20.625 mm (W x L) 0.914 mm x 19.126 mm (W x L) 0.914 mm x 6.858 mm
[2] [2] [2] [2] [2]
[2] [2]
American Technical Ceramics type 100B or capacitor of same quality. The striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) with r = 6.15 and thickness = 0.635 mm.
BLF4G10-160_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 22 June 2007
8 of 14
NXP Semiconductors
BLF4G10-160
UHF power LDMOS transistor
Vbias(12 V - 28 V)
Q1 R1 R2 R4 C3 C4 R6 R5 R10 R9 R7 R8 L5 Q2 C5 C7 L4 L3 Q3 L6 C6 C8 C9 C10 C11 R3
VDD(28 V)
L7 L8 L9 C12 L10
RF in
L1
C1
L2
RF out
C2
001aag559
See Table 9 for a list of components
Fig 14. Circuit schematic for 869 MHz to 894 MHz CDMA demo test circuit
Vbias(12 V - 28 V)
Q1 C3 C4 R5 R7 C6 R2 R4 R3 L1 C1 L2 L3 L4 L7 L8 C5 L5 R8 C7 Q3 R9 R6 R10 Q2 L6 C8 C9 C10
VDD(28 V)
R1
C11
L10 L9
C2
C12
BLF4G10-160
CDMA in
BLF4G10-160
CDMA out
001aag560
The other side is unetched and serves as a ground plane. See Table 9 for a list of components.
Fig 15. Component layout for 869 MHz to 894 MHz CDMA demo test circuit
BLF4G10-160_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 22 June 2007
9 of 14
NXP Semiconductors
BLF4G10-160
UHF power LDMOS transistor
List of components (see Figure 14 and Figure 15). Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor ceramic capacitor tantalum capacitor ceramic capacitor electrolytic capacitor multilayer ceramic chip capacitor stripline stripline tapered stripline stripline stripline stripline stripline tapered stripline stripline stripline SMD resistor SMD resistor potentiometer SMD resistor SMD resistor SMD resistor SMD resistor SMD resistor SMD resistor voltage regulator transistor BLF4G10-160 Value 68 pF 1.3 pF 100 nF 10 F 1 F 2200 F 18 pF 430 300 200 2 k 1.1 k 11 k 5.1 5.1 k 910 78L08 2N2222
[1] [1]
Table 9. C1, C6, C8 C2, C7 C3, C4 C5, C10 C9 C11 C12 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 R1, R2 R3 R4 R5 R6 R7 R8 R9 R10 Q1 Q2 Q3
[1] [2]
Component
Remarks
[1]
[2] [2] [2]
(W x L) 0.914 mm x 10.160 mm (W x L) 0.914 mm x 24.384 mm (W1 x W2 x L) 0.914 mm x 19.812 mm x 11.024 mm (W x L) 19.812 mm x 21.438 mm (W x L) 0.914 mm x 42.342 mm (W x L) 1.524 mm x 42.418 mm (W x L) 17.221 mm x 22.479 mm (W1 x W2 x L) 17.221 mm x 0.914 mm x 20.625 mm (W x L) 0.914 mm x 19.126 mm (W x L) 0.914 mm x 6.858 mm
[2] [2] [2] [2] [2]
[2] [2]
American Technical Ceramics type 100B or capacitor of same quality. The striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) with r = 6.15 and thickness = 0.635 mm.
BLF4G10-160_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 22 June 2007
10 of 14
NXP Semiconductors
BLF4G10-160
UHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
D
A
3
D1
F
U1 q C
B c
1
L
H
U2
p w1 M A M B M
E1
E
A
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
Fig 16. Package outline SOT502A
BLF4G10-160_1 (c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 22 June 2007
11 of 14
NXP Semiconductors
BLF4G10-160
UHF power LDMOS transistor
10. Abbreviations
Table 10. Acronym CDMA CW EDGE EVM GSM IS-95 LDMOS LDMOST PAR RF RMS SMD VSWR Abbreviations Description Code Division Multiple Access Continuous Waveform Enhanced Data GSM Environment Error Vector Magnitude Global System for Mobile communications CDMA Interim Standard 95 Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Peak-to-Average power Ratio Radio Frequency Root Mean Square Surface-Mount Device Voltage Standing-Wave Ratio
11. Revision history
Table 11. Revision history Release date 20070622 Data sheet status Product data sheet Change notice Supersedes Document ID BLF4G10-160_1
BLF4G10-160_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 22 June 2007
12 of 14
NXP Semiconductors
BLF4G10-160
UHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
BLF4G10-160_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 22 June 2007
13 of 14
NXP Semiconductors
BLF4G10-160
UHF power LDMOS transistor
14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 June 2007 Document identifier: BLF4G10-160_1

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